www.marktechopto.com 800.984.5337 MTE2050-OH1 infrared emitting diode features: ? high output power ? narrow beam angle ? high reliability applications: ? optical switches ? bar-code reader absolute maximum ratings (ta=25oc) items symbol ratings unit forward current (dc) if 100 ma forward current (pulse) *1 ifp 1 a reverse voltage vr 5 v power dissipation pd 180 mw operating temperature topr -20 ~ +80 oc storage temperature tstg -30 ~ +100 oc junction temperature tj 100 oc lead soldering temperature *2 tls 260 oc *1: tw=10s, t=10ms *2: time 5 sec. max, positions: up to 3mm from the body anode cathode dimensions (unit:mm)
www.marktechopto.com 800.984.5337 MTE2050-OH1 electrical & optical characteristics (ta = 25oc) items symbol conditions min typ max unit power output po if=50ma -- 11 -- mw forward voltage vf if=50ma -- 1.45 1.8 v reverse current ir vr=5v -- -- 10 a peak wavelength p if=50ma -- 880 -- nm spectral line half width if=50ma -- 60 -- nm half intensity beam angle if=50ma -- 12 -- deg. rise time tr ifp=50ma -- 1.5 -- s fall time tf ifp=50ma -- 0.8 -- s junction capacitance cj 1mhz, v=0v -- 15 -- pf temp. coe cient of po p/t if=10ma -- -0.5 -- %/oc temp coe cient of vf v/t if=10ma -- -1.5 -- mv/oc graphs:
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